The ROHM AW2K21 is a high-performance dual N-channel MOSFET designed for efficient power switching in compact and portable devices. With ultra-low RDS(on) and a miniature 2x2mm WLCSP package, it is ideal for smartphones, tablets, VR headsets, and drones.
±20A Continuous / ±40A Pulse Current Handling
30V Drain-Source Voltage
2mΩ Typical RDS(on) @ Vgs = 5V (1.5mΩ @ 10V)
Compact 2 x 2mm WLCSP Package
Top-Drain Structure Enhances Cell Density and Thermal Efficiency
100Ω Source Resistor for Charge Pump Gate Drive
Parameter | Value |
---|---|
Type | Dual N-Channel, Common-Source |
Vds | 30V |
Id (Continuous) | ±20A @ 25°C |
Id (Pulse) | ±40A |
RDS(on) @ Vgs=5V | 2mΩ typ / 4mΩ max |
RDS(on) @ Vgs=10V | 1.5mΩ typ / 3mΩ max |
Package | WLCSP 2.0 x 2.0mm |
Power Dissipation | 1.6W (on Cu board 40x40mm) |
Recommended Gate Voltage | ≥5V (3V not recommended) |
This product is suitable for:
Smartphones with high-capacity batteries
VR / AR headsets
Tablets and handheld gaming devices
Drones and camera modules
Load switching or battery protection circuits
Use ≥4.7µF capacitor on each drain
Include TVS diode on charging side
For gate drive via charge-pump, use source terminal (100Ω internal resistance)