The SiHK050N65E is an N-channel MOSFET specifically designed for power factor correction (PFC) and high-efficiency DC-DC conversion, supporting power levels of up to 6kW. Key specifications include:
On-resistance (Rds(on)): 48mΩ (at 25°C, 10Vgs)
Gate charge (Qg): 78nC (16A, 520V, 10Vgs)
Optimized for 200–277Vac inputs, the SiHK050N65E aligns with the Open Compute Project’s ORV3 standard. It enables power supply designs to meet titanium efficiency requirements, helping server power supplies achieve up to 96% peak efficiency. Additionally, the MOSFET is designed to withstand overvoltage transients in avalanche mode, with 100% UIS testing ensuring reliable operation under harsh conditions.
For applications involving hard switching, such as PFC stages and two-switch forward converters, the device features:
Effective output capacitance (Co(er)): 167pF
Effective output capacitance (Co(tr)): 1.119nF
These characteristics contribute to low switching losses and enhanced system efficiency.
The SiHK050N65E is housed in a compact 10 x 12mm surface-mount TOLL package, which provides improved thermal performance and ease of integration. Additionally, the inclusion of a Kelvin connection ensures better gate drive control, reducing switching losses and enhancing overall efficiency.
This high-performance MOSFET is suitable for a wide range of applications, including:
Server power supplies and edge computing
Discharge lamps
Solar inverters
Welding equipment
Motor drives
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