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Nexperia BUK9K29-100E Datesheet

Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications. The Nexperia BUK9K29-100E is a high-performance N-channel MOSFET designed for switching and power management applications. It features a maximum drain-source voltage of 100 V, continuous drain current of 29 A, and low on-resistance (RDS(on)) for high efficiency and minimal heat generation. Housed in a TO-252 (DPAK) package, this device is ideal for power supplies, motor drives, and load switching circuits requiring robust and reliable operation.

General description:

Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.

Features and benefits:

• Q101 compliant

• Repetitive avalanche rated

• Suitable for thermally demanding environments due to 175 °C rating

• True logic level gate with VGS(th) > 0.5 V @ 175 °C

Applications:

• 12 V Automotive systems

• Motors, lamps and solenoid control

• Start-stop micro-hybrid applications

• Transmission control

• Ultra high performance power switching


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