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Infineon BSC026N08NS5 Datesheet

The BSC026N08NS5 is an N-channel power MOSFET from Infineon's OptiMOS™ 5 family, designed for high-efficiency power conversion. It is optimized for synchronous rectification in server and desktop applications, delivering low switching and conduction losses. Packaged in a compact TDSON-8 surface-mount package, this 80V device features a maximum drain-source on-resistance of 2.6mΩ and supports a continuous drain current of up to 100A . Compared to the previous generation, it offers an RDS(on) reduction of up to 43% and an output capacitance reduction of up to 44% . The device is 100% avalanche tested, qualified according to JEDEC standards for target applications, and features superior thermal resistance.

Features:

•OptimizedforSynchronousRectificationinserveranddesktop

•100%avalanchetested

•Superiorthermalresistance

•N-channel

•QualifiedaccordingtoJEDEC1)fortargetapplications

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21


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