DESCRIPTION：

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxxare high-speed, 4,194,304-bit static RAMs organized as262,144 words by 16 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques,yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE and OE. The active LOWWrite Enable (WE) controls both writing and reading of thememory. A data byte allows Upper Byte (UB) and LowerByte (LB) access.The IS61WV25616Axx/Bxx and IS64WV25616Bxx arepackaged in the JEDEC standard 44-pin TSOP Type II and48-pin Mini BGA (6mm x 8mm).

FEATURES：

HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical)

CMOS standbyLOW POWER:(IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical)CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available