DESCRIPTION：

The TC58NVG1S3HTAI0 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable andProgrammable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes  64 pages  2048 blocks.The device has two 2176-byte static registers which allow program and read data to be transferred between theregister and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single blockunit (128 Kbytes + 8 Kbytes: 2176 bytes  64 pages).The TC58NVG1S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and datainput/output as well as for command inputs. The Erase and Program operations are automatically executed, makingthe device most suitable for applications such as solid-state file storage, voice recording, image file memory for stillcameras and other systems which require high-density non-volatile memory data storage.

FEATURES：

 Organization x8Memory cell array 2176  128K  8Register 2176  8Page size 2176 bytesBlock size (128K  8K) bytes

 ModesRead, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

 Mode controlSerial input/outputCommand control

 Number of valid blocksMin 2008 blocksMax 2048 blocks

 Power supplyVCC  2.7V to 3.6V

 Access timeCell array to register 25 s maxRead Cycle Time 25 ns min (CL=50pF)

 Program/Erase timeAuto Page Program 300 s/page typ.Auto Block Erase 2.5 ms/block typ.

 Operating currentRead (25 ns cycle) 30 mA maxProgram (avg.) 30 mA maxErase (avg.) 30 mA maxStandby 50 A max

 PackageTSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)

 8 bit ECC for each 512Byte is required.