Features:

• Open NAND Flash Interface (ONFI) 1.0-compliant1

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 512 blocks per plane

– Device size: 1Gb: 1024 blocks

• Asynchronous I/O performance

–tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs

– Program page: 200µs (TYP, 3.3V and 1.8V)

– Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode

– Read page cache mode

– One-time programmable (OTP) mode

– Two-plane commands

– Read unique ID

– Internal data move

– Block lock (1.8V only)

• Operation status byte provides software method fordetecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Internal data move operations supported within thedevice from which data is read

• Ready/busy# (R/B#) signal provides a hardwaremethod for detecting operation completion

• WP# signal: write protect entire device

• First block (block address 00h) is valid when shipped from factory with ECC. For minimum requiredECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

• RESET (FFh) required as first command after power-on

• Alternate method of device initialization (Nand_Init) after power up3 (contact factory)

• Quality and reliability

– Data retention: JESD47 compliant; see qualification report

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating Voltage Range

– VCC: 2.7–3.6V– VCC: 1.7–1.95V

• Operating temperature:

– Commercial (CT): –0ºC to +70ºC

– Industrial (IT): –40ºC to +85ºC

• Package– 48-pin TSOP Type 1, CPL2