General Description:

These dual N−Channel logic level enhancement mode field effecttransistors are produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance. This device has beendesigned especially for low voltage applications as a replacement forbipolar digital transistors and small signal MOSFETs.

Features:

 25 V, 0.50 A Continuous, 1.5 A Peak

 RDS(ON) = 0.45  @ VGS = 4.5 V

 RDS(ON) = 0.60  @ VGS = 2.7 V

 Very Low Level Gate Drive Requirements Allowing DirectOperation in 3 V Circuits (VGS(th) < 1.5 V)

 Gate−Source Zener for ESD Ruggedness (>6 kV Human BodyModel)

 Compact Industry Standard SC70−6 Surface Mount Package These Devices are Pb−Free and are RoHS Compliant