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Description:
SVF2N60M(MJ)(NF)(F)(D) N-Channel Enhanced High Voltage Power MOS Field Effect Transistors are fabricated using Silan Microelectronics' F-Celiīm planar high voltage VDMOS process technology. The advanced process and cell structure enable the product to have low on-resistance, superior switching performance, and high avalanche breakdown resistance. The product can be widely used in AC-DC switching power supplies, DC-DC power converters, and high-voltage H-bridge PWM motor drives.
Features:
①2A, 600V, Ros(on)typical)=3.72@VGs=10V.
②Low gate charge.
Low reverse transfer capacitance.
④Fast switching speed.
⑤ Improved dv/dt capability.
You can get your Silan SVF2N60MJ solution by flling out the form below and we will contact you immediately.
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