These N-channel Power MOSFETs are built on the advanced STripFET™ F7 technology, featuring an enhanced trench gate structure that delivers exceptionally low on-state resistance (RDS(on)), reduced internal capacitance, and minimized gate charge for faster and more efficient switching performance. Designed and qualified for automotive applications per AEC-Q101 standards, these devices are engineered to meet the rigorous reliability and quality requirements of the automotive industry. With among the lowest RDS(on) available on the market, an excellent figure of merit (FoM), and a low Crss/Ciss ratio for enhanced EMI immunity, these MOSFETs provide superior power efficiency and robust electromagnetic compatibility. High avalanche ruggedness further ensures reliable operation under stressful switching conditions, making these devices ideal for a wide range of switching applications in automotive and industrial environments.