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TI UCC27524AQDRQ1 STOCK

The UCC27524A-Q1 is a dual-channel, high-speed, low-side gate driver device capable of effectively driving MOSFET and IGBT power switches. It is a model in the UCC2752x family and is a dual non-inverting driver. To increase robustness and durability, the device adds the capability to directly handle –5 V at the input pins. Using a design capable of greatly reducing shoot-through current internally, it can deliver high peak current pulses of up to 5-A source and 5-A sink current to capacitive loads, and it also features rail-to-rail drive capability and an extremely small propagation delay typically of 17 ns. In addition, the driver features two channels with matched internal propagation delays, making it very suitable for applications such as synchronous rectifiers that have strict timing requirements for dual gate drive. This also enables the two channels to be paralleled to effectively increase current drive capability or to drive two parallel switches using a single input signal.

Description:

The UCC27524A-Q1 device is a dual-channel, high-speed, low-side gate driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A-Q1 device is a model in the UCC2752x family. To increase robustness and durability, the UCC27524A-Q1 device adds the capability to directly handle –5 V at the input pins. The UCC27524A-Q1 device is a dual non-inverting driver. Using a design capable of greatly reducing shoot-through current internally, the UCC27524A-Q1 device is capable of delivering high peak current pulses of up to 5-A source and 5-A sink current to capacitive loads, and this device also features rail-to-rail drive capability and an extremely small propagation delay typically of 17 ns. In addition, this driver features two channels with matched internal propagation delays, a characteristic that makes this driver very suitable for applications such as synchronous rectifiers that have strict timing requirements for dual gate drive. This also enables the two channels to be paralleled to effectively increase current drive capability or to drive two parallel switches using a single input signal. The input pin thresholds are based on TTL- and CMOS-compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. The wide hysteresis between the high and low thresholds provides excellent noise immunity.


Features:


Qualified for automotive applications


The following features in accordance with AEC-Q100: – Device temperature grade 1


Industry-standard pinout


Two independent gate-drive channels


5-A peak source and sink current


Independent enable function for each output


TTL- and CMOS-compatible logic thresholds (independent of supply voltage)


Hysteretic logic thresholds for high noise immunity


Capable of handling negative voltage (–5 V) at the input


Input and enable pin voltage levels are not limited by the VDD pin auxiliary supply voltage


4.5-V to 18-V single-supply voltage range


Output held low during VDD undervoltage lockout (UVLO) (ensures glitch-free operation during power-up and power-down)


Short propagation delay (typical value 17 ns)


Fast rise and fall times (typical values 6 ns and 10 ns, respectively)


Typical delay matching between the 2 channels of 1 ns


Capable of paralleling two high drive-current outputs


Output remains low when the input is floating


SOIC-8 and VSSOP-8 PowerPAD™ package options


Operating temperature range of –40°C to 150°C


Applications:


Automotive


Switch-mode power supplies


DC/DC converters


Motor control, solar


Gate drive for newly emerging wide-bandgap power devices such as GaN


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