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GigaDevice GDQ2BFAC-WJ Datesheet

The GigaDevice GDQ2BFAC-WJ is a high-speed NOR Flash memory IC engineered for industrial, automotive, and embedded applications requiring reliable non-volatile storage. It delivers fast read and write speeds, high endurance, long data retention, and low power consumption. The IC is ideal for microcontroller systems, IoT devices, and consumer electronics, providing stable operation across a wide temperature range. The datasheet contains detailed specifications, electrical characteristics, pin configurations, and timing diagrams for seamless system integration.

FEATURES:

◆ Power supply: VDD = VDDQ = 1.2V (1.14V to 1.26V); VPP = 2.5V (2.375V to 2.75V)

◆ JEDEC standard package: 78-Ball FBGA (x8)

◆ Array Configuration: 16 Banks (x8) 4 groups of 4 banks

◆ 8n-Bit prefetch architecture

◆ Burst Length (BL): 8 and 4 with Burst Chop (BC)

◆ Programmable CAS Latency (CL)

◆ Programmable CAS Write Latency (CWL)

◆ Internal generated VREF for data inputs

◆ Data Mask (DM) for write data

◆ On-Die Termination (ODT): Support Nominal, Park and Dynamic ODT

◆ Interface: 1.2V Pseudo Open Drain (POD) IO

◆ Differential clock and data strobe inputs (CK_t ,CK_c; DQS_t, DQS_c)

◆ Per DRAM Addressability (PDA)

◆ Data Bus Inversion (DBI)

◆ Asynchronous reset for power up

◆ Maximum Power Saving Mode (MPSM)

◆ Precharge: Auto precharge option for each burst access

◆ Operating case temperature: -40°C ≤ TCASE ≤ 95°C

◆ Support auto-refresh and self-refresh mode

◆ Average Refresh Period:

-7.8μs at -40°C ≤ TCASE ≤ 85°C

-3.9μs at 85°C < TCASE ≤ 95°C

◆ Fine granularity refresh 2x, 4x mode for smaller tRFC

◆ Programmable data strobe preambles

◆ Command Address (CA) Parity is supported

◆ Write Cyclic Redundancy Code (CRC) is supported

◆ Connectivity test mode (TEN) is supported

◆ Gear Down Mode

◆ Output driver calibration through ZQ pin (RZQ: 240ohm ± 1%)

◆ JEDEC JESD-79-4D compliant

◆ RoHS compliant



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