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TI TLC6C598QPWRQ1 Datesheet

The TLC6C598-Q1 is a monolithic, medium-voltage, low-current power 8-bit shift register designed for systems requiring relatively moderate load power, such as LEDs. It contains an 8-bit serial-in, parallel-out shift register feeding an 8-bit D-type storage register; data transfers through the shift and storage registers on the rising edges of SRCK and RCK respectively, and the storage register transfers data to the output buffer when CLR is high, with a low on CLR clearing all registers. Holding output enable (G) high holds all output buffer data low and turns all drain outputs off, while holding G low makes storage-register data transparent to the output buffers. The DMOS transistor outputs are off when buffer data is low and provide sink-current capability when data is high.

Description:

The TLC6C598-Q1 is a monolithic, medium-voltage,low-current power 8-bit shift register designed for usein systems that require relatively moderate loadpower, such as LEDs.This device contains an 8-bit serial-in, parallel-outshift register that feeds an 8-bit D-type storageregister. Data transfers through both the shift andstorage registers on the rising edge of the shiftregister clock (SRCK) and the register clock (RCK),respectively. The storage register transfers data tothe output buffer when shift register clear (CLR) ishigh. A low on CLR clears all registers in the device.Holding the output enable (G) high, holds all data inthe output buffers low, and all drain outputs are off.Holding G low makes data from the storage registertransparent to the output buffers. When data in theoutput buffers is low, the DMOS transistor outputs areoff. When data is high, the DMOS transistor outputshave sink-current capability. The serial output (SEROUT) clocks out of the device on the falling edge ofSRCK to provide additional hold time for cascadedapplications. This provides improved performance forapplications where clock signals may be skewed,devices are not located near one another, or thesystem must tolerate electromagnetic interference.The device contains built-in thermal shutdownprotection.Outputs are low-side, open-drain DMOS transistorswith output ratings of 40 V and 50 mA continuoussink-current capabilities when Vcc = 5 V. The currentlimit decreases as the junction temperature increasesfor additional device protection. The device alsoprovides up to 2000 V of ESD protection when testedusing the human-body model and 200 V when usingthe machine model.The TLC6C598-Q1 characterization is for foroperation over the operating ambient temperaturerange of −40°C to 125°C.

 Features:

• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:– Device Temperature Grade 1: –40°C to 125°CAmbient Operating Temperature Range– Device HBM ESD Classification Level H2– Device CDM ESD Classification Level C3B

• Wide Vcc From 3 V to 5.5 V

• Output Maximum Rating of.40 V

• Eight Power DMOS Transistor Outputs of 50-mAContinuous Current With VCC = 5 V

• Thermal Shutdown Protection

• Enhanced Cascading for Multiple Stages

• All Registers Cleared With Single Input

• Low Power Consumption

• Slow Switching Time (tr and tf), Which HelpsSignificantly With Reducing EMI

• 16-Pin TSSOP-PW Package

• 16-Pin SOIC-D Package

Applications:

• Instrumentation Cluster

• Tell-Tale Lamps

• LED Illumination and Control


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